FGW50N60VD(50G60VD) IGBT Transistor

The FGW50N60VD(50G60VD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW50N60VD(50G60VD) transistor as follows.

FGW50N60VD(50G60VD) Transistor Specification

Transistor Code		FGW50N60VD(50G60VD)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	360W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.6V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		215
Rise Time		90

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