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FGW40N120WD(40G120WD) IGBT Transistor

The FGW40N120WD(40G120WD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW40N120WD(40G120WD) transistor as follows.

Circuit diagram symbol of the FGW40N120WD(40G120WD) transistor

FGW40N120WD(40G120WD) Transistor Specification

Transistor Code FGW40N120WD(40G120WD)
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 360W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 110
Rise Time 54

UXPython is not the creator or an official representative of the FGW40N120WD(40G120WD) IGBT transistor. You can download the official FGW40N120WD(40G120WD) IGBT transistor datasheet to get more infromation about this transistor.

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