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FGW35N60HD(35G60HD) IGBT Transistor

The FGW35N60HD(35G60HD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW35N60HD(35G60HD) transistor as follows.

FGW35N60HD(35G60HD) Transistor Specification

Transistor Code		FGW35N60HD(35G60HD)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	P_c	230W
Collector-Emitter Voltage (Maximum)	V_CE	600V
Gate-Emitter Voltage (Maximum)	V_GE	20V
Collector-Emitter Saturation Voltage	V_CE(on)	1.5V
Collector Current (Maximum)	I_C	35A
Operating Junction Temperature (Maximum)		175 ^oC
Collector Capacitance		140
Rise Time		60

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