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FGW35N60H(35G60H) IGBT Transistor

The FGW35N60H(35G60H) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW35N60H(35G60H) transistor as follows.

Circuit diagram symbol of the FGW35N60H(35G60H) transistor

FGW35N60H(35G60H) Transistor Specification

Transistor Code FGW35N60H(35G60H)
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 230W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 35A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 140
Rise Time 60

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