The FGW30N60VD(30G60VD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the FGW30N60VD(30G60VD) transistor as follows.
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| Transistor Code | FGW30N60VD(30G60VD) | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | TO247 | |
| Collector Power Dissipation (Maximum) | Pc | 230W |
| Collector-Emitter Voltage (Maximum) | VCE | 600V |
| Gate-Emitter Voltage (Maximum) | VGE | 20V |
| Collector-Emitter Saturation Voltage | VCE(on) | 1.6V |
| Collector Current (Maximum) | IC | 30A |
| Operating Junction Temperature (Maximum) | 175 oC | |
| Collector Capacitance | 145 | |
| Rise Time | 60 | |
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