FGW30N120H(30G120H) IGBT Transistor

The FGW30N120H(30G120H) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW30N120H(30G120H) transistor as follows.

FGW30N120H(30G120H) Transistor Specification

Transistor Code		FGW30N120H(30G120H)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	260W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		105
Rise Time		28

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