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FGW25N120WD(25G120WD) IGBT Transistor

The FGW25N120WD(25G120WD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW25N120WD(25G120WD) transistor as follows.

Circuit diagram symbol of the FGW25N120WD(25G120WD) transistor

FGW25N120WD(25G120WD) Transistor Specification

Transistor Code FGW25N120WD(25G120WD)
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 220W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 75
Rise Time 32

UXPython is not the creator or an official representative of the FGW25N120WD(25G120WD) IGBT transistor. You can download the official FGW25N120WD(25G120WD) IGBT transistor datasheet to get more infromation about this transistor.

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