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FGW25N120VD(25G120VD) IGBT Transistor

The FGW25N120VD(25G120VD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW25N120VD(25G120VD) transistor as follows.

Circuit diagram symbol of the FGW25N120VD(25G120VD) transistor

FGW25N120VD(25G120VD) Transistor Specification

Transistor Code FGW25N120VD(25G120VD)
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 25A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 105
Rise Time 45

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