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FGW15N120VD(15G120VD) IGBT Transistor

The FGW15N120VD(15G120VD) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW15N120VD(15G120VD) transistor as follows.

Circuit diagram symbol of the FGW15N120VD(15G120VD) transistor

FGW15N120VD(15G120VD) Transistor Specification

Transistor Code FGW15N120VD(15G120VD)
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 155W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.85V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 58
Rise Time 20

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