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FGM623S IGBT Transistor

The FGM623S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGM623S transistor as follows.

Circuit diagram symbol of the FGM623S transistor

FGM623S Transistor Specification

Transistor Code FGM623S
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PF(FM100)
Collector Power Dissipation (Maximum) Pc 60W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.5V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 150pf
Rise Time 80

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