FGM623S IGBT Transistor

The FGM623S is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGM623S transistor as follows.

FGM623S Transistor Specification

Transistor Code		FGM623S
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PF(FM100)
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		150pf
Rise Time		80

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