FGL60N100BNTD IGBT Transistor

The FGL60N100BNTD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGL60N100BNTD transistor as follows.

FGL60N100BNTD Transistor Specification

Transistor Code		FGL60N100BNTD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	1000V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	42.0A

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