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FGL60N100BNTD IGBT Transistor

The FGL60N100BNTD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGL60N100BNTD transistor as follows.

Circuit diagram symbol of the FGL60N100BNTD transistor

FGL60N100BNTD Transistor Specification

Transistor Code FGL60N100BNTD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 42.0A

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