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FGL40N120AN IGBT Transistor

The FGL40N120AN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGL40N120AN transistor as follows.

Circuit diagram symbol of the FGL40N120AN transistor

FGL40N120AN Transistor Specification

Transistor Code FGL40N120AN
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO264
Collector Power Dissipation (Maximum) Pc 500W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 25V
Collector-Emitter Saturation Voltage VCE(on) 2.6V
Collector Current (Maximum) IC 64A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 370
Rise Time 20

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