FGL40N120AN IGBT Transistor

The FGL40N120AN is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGL40N120AN transistor as follows.

FGL40N120AN Transistor Specification

Transistor Code		FGL40N120AN
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector Power Dissipation (Maximum)	Pc	500W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	25V
Collector-Emitter Saturation Voltage	VCE(on)	2.6V
Collector Current (Maximum)	IC	64A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		370
Rise Time		20

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