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FGH80N60FD2 IGBT Transistor

The FGH80N60FD2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGH80N60FD2 transistor as follows.

Circuit diagram symbol of the FGH80N60FD2 transistor

FGH80N60FD2 Transistor Specification

Transistor Code FGH80N60FD2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 40.0A

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