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FGH80N60FD IGBT Transistor

The FGH80N60FD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGH80N60FD transistor as follows.

Circuit diagram symbol of the FGH80N60FD transistor

FGH80N60FD Transistor Specification

Transistor Code FGH80N60FD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 40.0A

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