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FGH60N60UFD IGBT Transistor

The FGH60N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGH60N60UFD transistor as follows.

Circuit diagram symbol of the FGH60N60UFD transistor

FGH60N60UFD Transistor Specification

Transistor Code FGH60N60UFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 60.0A

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