FGH60N60SFD IGBT Transistor

The FGH60N60SFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGH60N60SFD transistor as follows.

FGH60N60SFD Transistor Specification

Transistor Code		FGH60N60SFD
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.3V
Collector Current (Maximum)	IC	60.0A

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