The FGD3N60LSD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the FGD3N60LSD transistor as follows.
| Transistor Code | FGD3N60LSD | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | TO252(DPAK) | |
| Collector-Emitter Voltage (Maximum) | VCE | 600V |
| Collector-Emitter Saturation Voltage | VCE(on) | 1.2V |
| Collector Current (Maximum) | IC | 6.0A |
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