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FGB20N60SF IGBT Transistor

The FGB20N60SF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGB20N60SF transistor as follows.

Circuit diagram symbol of the FGB20N60SF transistor

FGB20N60SF Transistor Specification

Transistor Code FGB20N60SF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO263(D2PAK)
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.2V
Collector Current (Maximum) IC 20.0A

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