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FGAF40N60UFD IGBT Transistor

The FGAF40N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGAF40N60UFD transistor as follows.

Circuit diagram symbol of the FGAF40N60UFD transistor

FGAF40N60UFD Transistor Specification

Transistor Code FGAF40N60UFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PF
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 2.3V
Collector Current (Maximum) IC 20.0A

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