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FGA60N60UFD IGBT Transistor

The FGA60N60UFD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGA60N60UFD transistor as follows.

Circuit diagram symbol of the FGA60N60UFD transistor

FGA60N60UFD Transistor Specification

Transistor Code FGA60N60UFD
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector-Emitter Voltage (Maximum) VCE 600V
Collector-Emitter Saturation Voltage VCE(on) 1.9V
Collector Current (Maximum) IC 60.0A

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