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FGA50N100BNTD2 IGBT Transistor

The FGA50N100BNTD2 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGA50N100BNTD2 transistor as follows.

Circuit diagram symbol of the FGA50N100BNTD2 transistor

FGA50N100BNTD2 Transistor Specification

Transistor Code FGA50N100BNTD2
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3PN
Collector-Emitter Voltage (Maximum) VCE 1000V
Collector-Emitter Saturation Voltage VCE(on) 2.5V
Collector Current (Maximum) IC 35.0A

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