The FGA50N100BNTD is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the FGA50N100BNTD transistor as follows.
Transistor Code | FGA50N100BNTD | |
---|---|---|
Transistor Type | IGBT | |
IGBT Control Channel Type | N-Channel | |
Package | TO3PN | |
Collector-Emitter Voltage (Maximum) | VCE | 1000V |
Collector-Emitter Saturation Voltage | VCE(on) | 1.5V |
Collector Current (Maximum) | IC | 50.0A |
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