FF225R17ME4 IGBT Transistor

The FF225R17ME4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF225R17ME4 transistor as follows.

FF225R17ME4 Transistor Specification

Transistor Code		FF225R17ME4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1500W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.95V
Collector Current (Maximum)	IC	225A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		80

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