FF200R12KE3 IGBT Transistor

The FF200R12KE3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF200R12KE3 transistor as follows.

FF200R12KE3 Transistor Specification

Transistor Code		FF200R12KE3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1050W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		90

UXPython is not the creator or an official representative of the FF200R12KE3 IGBT transistor. You can download the official FF200R12KE3 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

NGTB15N120L IGBT Transistor IXA40PG1200DHGLB IGBT Transistor APT40GP60BG IGBT Transistor MWI35-12T7T IGBT Transistor NGTB30N135IHRWG IGBT Transistor HGTP3N60C3 IGBT Transistor SGP5N60RUF IGBT Transistor SKW15N120 IGBT Transistor IXSH25N100 IGBT Transistor MMG40A120B7HN IGBT Transistor MWI35-12A7 IGBT Transistor IKW30N100T IGBT Transistor NGTB60N60S IGBT Transistor IXGP30N120B3 IGBT Transistor MMG75S120B6HN IGBT Transistor IXGX100N170 IGBT Transistor RJH65S04DPQ-A0 IGBT Transistor FF1200R17KP4_B2 IGBT Transistor G34N100E2 IGBT Transistor GT15G101 IGBT Transistor