FF150R12YT3 IGBT Transistor

The FF150R12YT3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF150R12YT3 transistor as follows.

FF150R12YT3 Transistor Specification

Transistor Code		FF150R12YT3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	625W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		30

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