The FF150R12MS4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.
Circuit diagram symbol of the FF150R12MS4G transistor as follows.
| Transistor Code | FF150R12MS4G | |
|---|---|---|
| Transistor Type | IGBT | |
| IGBT Control Channel Type | N-Channel | |
| Package | MODULE | |
| Collector Power Dissipation (Maximum) | Pc | 1250W |
| Collector-Emitter Voltage (Maximum) | VCE | 1200V |
| Gate-Emitter Voltage (Maximum) | VGE | 20V |
| Collector-Emitter Saturation Voltage | VCE(on) | 3.2V |
| Collector Current (Maximum) | IC | 150A |
| Operating Junction Temperature (Maximum) | 125 oC | |
| Rise Time | 60 | |
UXPython is not the creator or an official representative of the FF150R12MS4G IGBT transistor. You can download the official FF150R12MS4G IGBT transistor datasheet to get more infromation about this transistor.
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