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FF100R12RT4 IGBT Transistor

The FF100R12RT4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FF100R12RT4 transistor as follows.

Circuit diagram symbol of the FF100R12RT4 transistor

FF100R12RT4 Transistor Specification

Transistor Code FF100R12RT4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 555W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.75V
Collector Current (Maximum) IC 100A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 20

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