FD800R33KF2C IGBT Transistor

The FD800R33KF2C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD800R33KF2C transistor as follows.

FD800R33KF2C Transistor Specification

Transistor Code		FD800R33KF2C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	9600W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	3.4V
Collector Current (Maximum)	IC	800A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		180

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