FD600R12KF4 IGBT Transistor

The FD600R12KF4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD600R12KF4 transistor as follows.

FD600R12KF4 Transistor Specification

Transistor Code		FD600R12KF4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	3900W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	600A
Operating Junction Temperature (Maximum)		150 oC

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