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FD600R12IP4D IGBT Transistor

The FD600R12IP4D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD600R12IP4D transistor as follows.

Circuit diagram symbol of the FD600R12IP4D transistor

FD600R12IP4D Transistor Specification

Transistor Code FD600R12IP4D
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 3350W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 600A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 120

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