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FD300R12KS4 IGBT Transistor

The FD300R12KS4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD300R12KS4 transistor as follows.

Circuit diagram symbol of the FD300R12KS4 transistor

FD300R12KS4 Transistor Specification

Transistor Code FD300R12KS4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 1950W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 3.2V
Collector Current (Maximum) IC 300A
Operating Junction Temperature (Maximum) 125 oC
Rise Time 60

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