FD200R12KE3 IGBT Transistor

The FD200R12KE3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD200R12KE3 transistor as follows.

FD200R12KE3 Transistor Specification

Transistor Code		FD200R12KE3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1050W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		125 oC
Rise Time		90

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