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FD1000R33HL3-K IGBT Transistor

The FD1000R33HL3-K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD1000R33HL3-K transistor as follows.

Circuit diagram symbol of the FD1000R33HL3-K transistor

FD1000R33HL3-K Transistor Specification

Transistor Code FD1000R33HL3-K
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 11500W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 1000A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 550

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