FD1000R33HE3-K IGBT Transistor

The FD1000R33HE3-K is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD1000R33HE3-K transistor as follows.

FD1000R33HE3-K Transistor Specification

Transistor Code		FD1000R33HE3-K
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	11500W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.55V
Collector Current (Maximum)	IC	1000A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		550

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