FD1000R17IE4 IGBT Transistor

The FD1000R17IE4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FD1000R17IE4 transistor as follows.

FD1000R17IE4 Transistor Specification

Transistor Code		FD1000R17IE4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	6250W
Collector-Emitter Voltage (Maximum)	VCE	1700V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	1000A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

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