FB30R06W1E3 IGBT Transistor

The FB30R06W1E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FB30R06W1E3 transistor as follows.

FB30R06W1E3 Transistor Specification

Transistor Code		FB30R06W1E3
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	115W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.55V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		16

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