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F4-200R06KL4 IGBT Transistor

The F4-200R06KL4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the F4-200R06KL4 transistor as follows.

Circuit diagram symbol of the F4-200R06KL4 transistor

F4-200R06KL4 Transistor Specification

Transistor Code F4-200R06KL4
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 695W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.95V
Collector Current (Maximum) IC 200A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 40

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