F3L200R07PE4 IGBT Transistor

The F3L200R07PE4 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the F3L200R07PE4 transistor as follows.

F3L200R07PE4 Transistor Specification

Transistor Code		F3L200R07PE4
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	680W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.55V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		50

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