F12-35R12KT4G IGBT Transistor

The F12-35R12KT4G is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the F12-35R12KT4G transistor as follows.

F12-35R12KT4G Transistor Specification

Transistor Code		F12-35R12KT4G
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	210W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.85V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		30

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