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DM2G75SH12A IGBT Transistor

The DM2G75SH12A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G75SH12A transistor as follows.

Circuit diagram symbol of the DM2G75SH12A transistor

DM2G75SH12A Transistor Specification

Transistor Code DM2G75SH12A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 7DM-1
Collector Power Dissipation (Maximum) Pc 600W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 75A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 400
Rise Time 65

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