DM2G50SH6N IGBT Transistor

The DM2G50SH6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G50SH6N transistor as follows.

DM2G50SH6N Transistor Specification

Transistor Code		DM2G50SH6N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM-1
Collector Power Dissipation (Maximum)	Pc	275W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		450
Rise Time		30

UXPython is not the creator or an official representative of the DM2G50SH6N IGBT transistor. You can download the official DM2G50SH6N IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APTGT300U120D4 IGBT Transistor IXA27IF1200HJ IGBT Transistor HGTD2N120BNS IGBT Transistor HGTG30N60C3 IGBT Transistor AOK30B60D IGBT Transistor IKP10N60T IGBT Transistor APT11GP60K IGBT Transistor IGW40T120 IGBT Transistor STGW60H65FB IGBT Transistor RJH60V3BDPE IGBT Transistor IRGP6630D IGBT Transistor KGT30N135NDH IGBT Transistor IRG4IBC30KD IGBT Transistor IXGR120N60C2 IGBT Transistor STGWT40H65FB IGBT Transistor APTGT75A170D1 IGBT Transistor MWI300-12E9 IGBT Transistor IXSH20N60B2D1 IGBT Transistor IXGP50N60C4 IGBT Transistor IXGH17N100U1 IGBT Transistor