DM2G200SH12AE IGBT Transistor

The DM2G200SH12AE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G200SH12AE transistor as follows.

DM2G200SH12AE Transistor Specification

Transistor Code		DM2G200SH12AE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	1350W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	200A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		1100
Rise Time		100

UXPython is not the creator or an official representative of the DM2G200SH12AE IGBT transistor. You can download the official DM2G200SH12AE IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APT75GN60LDQ3G IGBT Transistor FII40-06D IGBT Transistor HGTP7N60B3 IGBT Transistor IXDN55N120D1 IGBT Transistor SMBL1G150US120 IGBT Transistor MMG400D120B6TN IGBT Transistor IXGK50N60B IGBT Transistor IXGH38N60 IGBT Transistor GT15J101 IGBT Transistor KM435V IGBT Transistor SM2G200US60 IGBT Transistor IXGK400N30A3 IGBT Transistor RJP4301APP-M0 IGBT Transistor IGW50N65H5A IGBT Transistor IKW20N60H3 IGBT Transistor IXGX55N120A3H1 IGBT Transistor HGT1S7N60B3 IGBT Transistor APT36GA60S IGBT Transistor IXSH24N60A IGBT Transistor CT75AM-12 IGBT Transistor