DM2G100SH12A IGBT Transistor

The DM2G100SH12A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G100SH12A transistor as follows.

DM2G100SH12A Transistor Specification

Transistor Code		DM2G100SH12A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM-2
Collector Power Dissipation (Maximum)	Pc	800W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		520
Rise Time		60

UXPython is not the creator or an official representative of the DM2G100SH12A IGBT transistor. You can download the official DM2G100SH12A IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMG200Q060B6R IGBT Transistor CI40T120P IGBT Transistor KP810A IGBT Transistor NSGM100GB120 IGBT Transistor MG1215H-XBN2MM IGBT Transistor IGC142T120T8RL IGBT Transistor IHW20T120 IGBT Transistor RJH60D3DPE IGBT Transistor NGTB20N120IHR IGBT Transistor IXGP7N60CD1 IGBT Transistor IRG4IBC20FD IGBT Transistor SGF15N90D IGBT Transistor ART30U120 IGBT Transistor IRG4ZH50KD IGBT Transistor IXGA16N60C2 IGBT Transistor IXGH15N120C IGBT Transistor IXBN42N170A IGBT Transistor CT20ASJ-8 IGBT Transistor SNG30610 IGBT Transistor IXGT40N60B2D1 IGBT Transistor