DM2G100SH12A IGBT Transistor

The DM2G100SH12A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DM2G100SH12A transistor as follows.

DM2G100SH12A Transistor Specification

Transistor Code		DM2G100SH12A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		7DM-2
Collector Power Dissipation (Maximum)	Pc	800W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.8V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		520
Rise Time		60

UXPython is not the creator or an official representative of the DM2G100SH12A IGBT transistor. You can download the official DM2G100SH12A IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

MMIX4B20N300 IGBT Transistor STGB20NB41LZ IGBT Transistor IKB06N60T IGBT Transistor AUIRGS4062D1 IGBT Transistor MID150-12A4 IGBT Transistor IRG7PH35UD IGBT Transistor VS-GB150TH120N IGBT Transistor IXGK50N120C3H1 IGBT Transistor STGW30H65FB IGBT Transistor IXXK300N60C3 IGBT Transistor RJH30H2DPK-M0 IGBT Transistor FF225R17ME4_B11 IGBT Transistor VWI35-06P1 IGBT Transistor GA400TD25S IGBT Transistor IXXA50N60B3 IGBT Transistor MGP20N14CL IGBT Transistor IXGR64N60A3 IGBT Transistor MMG75S120B6UN IGBT Transistor BSM100GB170DLC IGBT Transistor IXGR50N160H1 IGBT Transistor