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DL2G50SH6N IGBT Transistor

The DL2G50SH6N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DL2G50SH6N transistor as follows.

Circuit diagram symbol of the DL2G50SH6N transistor

DL2G50SH6N Transistor Specification

Transistor Code DL2G50SH6N
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 6DM-2
Collector Power Dissipation (Maximum) Pc 240W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.1V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 450
Rise Time 30

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