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DL2G50SH12A IGBT Transistor

The DL2G50SH12A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the DL2G50SH12A transistor as follows.

Circuit diagram symbol of the DL2G50SH12A transistor

DL2G50SH12A Transistor Specification

Transistor Code DL2G50SH12A
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package 6DM-2
Collector Power Dissipation (Maximum) Pc 340W
Collector-Emitter Voltage (Maximum) VCE 1200V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 50A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 300
Rise Time 60

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