CPV364M4KPBF IGBT Transistor

The CPV364M4KPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CPV364M4KPBF transistor as follows.

CPV364M4KPBF Transistor Specification

Transistor Code		CPV364M4KPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SIP
Collector Power Dissipation (Maximum)	Pc	63W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.56V
Collector Current (Maximum)	IC	13A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		130
Rise Time		30

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