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CPV364M4KPBF IGBT Transistor

The CPV364M4KPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CPV364M4KPBF transistor as follows.

Circuit diagram symbol of the CPV364M4KPBF transistor

CPV364M4KPBF Transistor Specification

Transistor Code CPV364M4KPBF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SIP
Collector Power Dissipation (Maximum) Pc 63W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.56V
Collector Current (Maximum) IC 13A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 130
Rise Time 30

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