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CPV364M4FPBF IGBT Transistor

The CPV364M4FPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CPV364M4FPBF transistor as follows.

Circuit diagram symbol of the CPV364M4FPBF transistor

CPV364M4FPBF Transistor Specification

Transistor Code CPV364M4FPBF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package SIP
Collector Power Dissipation (Maximum) Pc 63W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 27A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 140
Rise Time 18

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