CPV363M4KPBF IGBT Transistor

The CPV363M4KPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CPV363M4KPBF transistor as follows.

CPV363M4KPBF Transistor Specification

Transistor Code		CPV363M4KPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SIP
Collector Power Dissipation (Maximum)	Pc	36W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.72V
Collector Current (Maximum)	IC	11A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		24

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