CI40T120P IGBT Transistor

The CI40T120P is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CI40T120P transistor as follows.

CI40T120P Transistor Specification

Transistor Code		CI40T120P
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	208W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		84

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