BSM50GP60 IGBT Transistor

The BSM50GP60 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BSM50GP60 transistor as follows.

BSM50GP60 Transistor Specification

Transistor Code		BSM50GP60
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector Power Dissipation (Maximum)	Pc	250W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.55V
Collector Current (Maximum)	IC	50A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		55

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